Method of providing contact via to a surface

Details Method of providing contact via to a surface Method of providing contact via to a surface

2008-05-20

2008-05-20

Picardat, Kevin M. (Department: 2822)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S638000, C438S672000

Reexamination Certificate

active

10964317

ABSTRACT:
A contact via to a surface of a semiconductor material is provided, the contact via having a sidewall which is produced by anisotropically etching a dielectric layer which is placed on via openings. A protective layer is provided on the surface of the semiconductor material. To protect the substrate, an initial etch through an interlayer dielectric is performed to create an initial via which extends toward, but not into the substrate. At least a portion of the protective layer is retained on the substrate. In another step, the final contact via is created. During this step the protective layer is penetrated to open a via to the surface of the semiconductor material.

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