Method of providing a pattern of conductive platinum silicide

Details Method of providing a pattern of conductive platinum silicide Method of providing a pattern of conductive platinum silicide

1988-02-08

1989-02-14

Powell, William A.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156656, 156657, 1565691, 252 792, 252 793, 427294, 427399, 437201, 437202, 437228, 437245, B44C 122, C03C 1500, C03C 2506, C23F 100

Patent

active

048044385

ABSTRACT:
In order to provide a pattern of conductive platinum silicide on a silicon substrate, a layer of platinum is deposited in an atmosphere having a vacuum of 10.sup.-8 Torr or less on a silicon substrate which was previously provided with selected oxide regions. This prevents oxygen from contaminating the deposited platinum layer. The substrate is then annealed for the first time in an atmosphere of 10.sup.-8 Torr or less to form a platinum silicide pattern in regions in which the deposited platinum directly contacts the silicon substrate. The substrate is then annealed for a second time in an atmosphere oxygen to form a protective oxide layer over the silicide. Next the unreacted platinum deposited on the oxide regions is electively removed by an aqua regia wet etch.

REFERENCES:
patent: 3889359 (1975-06-01), Rand
patent: 3924320 (1975-12-01), Altman et al.
patent: 4455738 (1984-06-01), Houston et al.
patent: 4590093 (1986-05-01), Woerlee et al.

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