Method of providing a gettering scheme in the manufacture of sil

Details Method of providing a gettering scheme in the manufacture of sil Method of providing a gettering scheme in the manufacture of sil

1997-12-23

2000-07-25

Mulpuri, Savitri

Semiconductor device manufacturing: process

Semiconductor substrate dicing

Having specified scribe region structure

438465, 438476, 438402, H01L 21301

Patent

active

06093624&

ABSTRACT:
A method of providing a gettering scheme in the manufacture of individual Silicon-On-Insulator (SOI) integrated circuits from an SOI wafer containing a number of such integrated circuits includes the steps of providing a gettering material in scribe lanes along which the SOI wafer is to be diced to obtain the individual SOI integrated circuits. The SOI wafer is then diced along the scribe lanes, leaving a portion of the gettering material on the diced edges of the individual integrated circuits. This method provides a simple and effective method for gettering in SOI technology in which diffusing impurities can be trapped before diffusing into the active area of the integrated circuits.

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