Method of protecting silicon wafers during wet chemical etching

Details Method of protecting silicon wafers during wet chemical etching Method of protecting silicon wafers during wet chemical etching

1996-11-19

1999-03-09

Green, Anthony

Etching a substrate: processes

Masking of a substrate using material resistant to an etchant

Mask resist contains organic compound

216 2, 216 67, 216 99, 438710, 438719, 438725, 438735, 438745, 438753, 438781, 438942, 438970, 438976, H01L 213065, H01L 21308, C23F 102

Patent

active

058795723

ABSTRACT:
A process for bulk micromachining a silicon wafer to form a silicon micromachined structure. The process involves the application of a protective film on one or more surfaces of the silicon wafer to protect metallization and circuitry on the wafer during the bulk micromachining process, during which a wet chemical etchant is employed to remove bulk silicon from a surface of the silicon wafer. The protective film is divinylsiloxane bisbenzocyclobutene (BCB), which has been found to be highly resistant to a wide variety of wet chemical etchants, and retains such resistant at elevated temperatures commonly preferred for bulk silicon etching. The degree to which this material is cured prior to etching is advantageously tailored to promote its resistance to the etchant and promote its adhesion to the silicon wafer.

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