Method of protecting an EUV mask from damage and contamination

Details Method of protecting an EUV mask from damage and contamination Method of protecting an EUV mask from damage and contamination

1997-12-22

1999-07-27

Rosasco, S.

Radiation imagery chemistry: process, composition, or product th

Radiation modifying product or process of making

Radiation mask

G03F 900

Patent

active

059288175

ABSTRACT:
A novel mask for photolithography in semiconductor processing and the mask fabrication method is disclosed. The mask includes a substrate, a patterned buffer layer, a patterned absorber layer above the patterned buffer layer, and a protective cap. The substrate preferably contains a multilayer resonant reflective surface. The buffer layer and protective cap are transmissive to the wavelength of light used in the photolithography. The absorber layer is absorptive to the wavelength of light used in the photolithography. The mask is fabricated by first depositing the buffer layer. The absorber layer is formed on the buffer layer. Both absorber layer and buffer layer are etched to create a pattern. A protective cap layer is then deposited on the patterned absorber layer and buffer layer, and the protective cap is planarized as needed to create a substantially smooth mask surface.

REFERENCES:
patent: 5795684 (1996-04-01), Troccolo

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