Method of promoting crystallization of an amorphous semiconducto

Details Method of promoting crystallization of an amorphous semiconducto Method of promoting crystallization of an amorphous semiconducto

1996-07-24

2000-12-05

Bowers, Charles

Semiconductor device manufacturing: process

Formation of semiconductive active region on any substrate

Amorphous semiconductor

438166, H01L 2102

Patent

active

061566276

ABSTRACT:
A substrate on which an amorphous silicon film is formed is placed in a vacuum chamber. An organic nickel vapor or gas is introduced into the chamber and then decomposed, so that a thin film containing nickel (a catalytic element which promotes crystallization of the amorphous silicon film) or a compound thereof is uniformly deposited on the amorphous silicon film. After that, the substrate is heated at a temperature such as 550.degree. C., lower than a normal solid phase growth temperature, for a short time such as 4 hours, to uniformly crystallize the amorphous silicon film. A crystalline silicon film is obtained by this crystallization process.

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