Method of programming non-volatile semiconductor memory...

Electrical computers and digital processing systems: memory – Storage accessing and control – Specific memory composition

Reexamination Certificate

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C365S185220

Reexamination Certificate

active

07117296

ABSTRACT:
A non-volatile semiconductor memory device includes a memory cell array in which electrically erasable and programmable memory cells are arrayed, each of the memory cells storing therein a first logic state with a threshold voltage lower than or equal to a first value or a second logic state with a threshold voltage higher than or equal to a second value that is higher than the first value, a data hold circuit for holding program data and sensing data as read out of the memory cell array, and a controller configured to control a program sequence, wherein the controller has the control functions of: a program control function for applying a program voltage to a selected memory cell of the memory cell array to let the data shift from the first logic state to the second logic state; a program verify control function for verifying that the programmed data of the selected memory cell shifted to the second logic state; an erratic program verify control function for checking that the threshold voltage of a memory cell to be held in the first logic state does not exceed a third value set as an upper limit value of a variation of the first logic state; and an over-program verify control function for checking that the threshold voltage of the selected memory cell shifted to the second logic state does not exceed a fourth value set as an upper limit thereof.

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U.S. Appl. No. 09/800,913, filed Mar. 8, 2001.
A sampling weak-program method to tighten Vth-distribution of 0.5 V for low-voltage flash memories. Shiga, H. et al. VLSI Circuits, 1999. Digest of Technical Papers. 1999 Symposium on, Jun. 17-19, 1999 pp. 33-36.

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