Method of programming non-volatile memory devices having a NAND

Details Method of programming non-volatile memory devices having a NAND Method of programming non-volatile memory devices having a NAND

1998-12-22

1999-10-26

Nelms, David

Static information storage and retrieval

Floating gate

Particular biasing

36518517, 36518528, G11C 1604

Patent

active

059739622

ABSTRACT:
A method for programming non-volatile semiconductor memory devices having NAND cell arrays is provided. In a program operation, a pass voltage is applied to unselected word lines, and then a voltage lower than the pass voltage is applied to only the word line which is adjacent to a selected word line and is placed between the selected word line and a reference selection circuit. According to this programming method, the memory device can be programmed without restriction of programming sequence.

REFERENCES:
patent: 5345418 (1994-09-01), Challa
patent: 5568420 (1996-10-01), Lim et al.
patent: 5677873 (1997-10-01), Choi et al.
patent: 5696717 (1997-12-01), Koh
patent: 5734609 (1998-03-01), Choi et al.
patent: 5815438 (1998-09-01), Haddad et al.

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