Method of programming multi-layer chalcogenide devices

Details Method of programming multi-layer chalcogenide devices Method of programming multi-layer chalcogenide devices

2011-08-16

2011-08-16

Hoang, Huan (Department: 2827)

Static information storage and retrieval

Systems using particular element

Resistive

C365S163000

Reexamination Certificate

active

08000125

ABSTRACT:
A method of programming a multi-layer chalcogenide electronic device. The device includes an active region in electrical communication with two terminals, where the active region includes two or more layers. The method includes providing an electrical signal between the two terminals, where the electrical signal alters an electrical characteristic of a layer remote from one of the terminals. In one embodiment, the layer remote from the terminal is a chalcogenide material and the electrical characteristic is resistance. In another embodiment, an electrical characteristic of the layer in contact with the terminal is also altered. The alteration of an electrical characteristic may be caused by a transformation of a chalcogenide material from one structural state to another structural state.

REFERENCES:
patent: 7190048 (2007-03-01), Campbell
patent: 7332735 (2008-02-01), Campbell
patent: 2006/0077741 (2006-04-01), Wang et al.
patent: 2007/0097739 (2007-05-01), Happ et al.
patent: 2010/0019216 (2010-01-01), Park et al.

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