Static information storage and retrieval – Read/write circuit – Bad bit
Patent
1983-12-20
1986-12-16
Hecker, Stuart N.
Static information storage and retrieval
Read/write circuit
Bad bit
365240, 371 10, 371 21, G11C 2900, G06F 1100
Patent
active
046302417
ABSTRACT:
A method of programming for a programmable circuit in a redundancy circuit system including a RAM having normal and spare memory cell rows constructed on a common chip and the programmable circuit, is disclosed. The programmable circuit has a plurality of fuses and can produce a signal for disabling all the normal memory cell rows while enabling a spare memory cell row corresponding to a combination of blown-out fuses and non-blown-out ones among the plurality of fuses with respect to a certain normal memory cell row address. The method comprises the steps of detecting a faulty memory cell row, storing the address thereof and supplying a fuse-blowing current one after another of those of the programmable circuit fuses which correspond to a certain logic level bits of the stored address.
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Tolley et al, "72K RAM Stands Up to Soft and Hard Errors", Electronics, vol. 55, No. 12, Jun. 16, 1982, pp. 147-151.
Spaw et al, "A 128K EPROM With Redundancy", IEEE Solid State Circuits Conference, Digest of Technical Papers, Feb. 1982, pp. 112-113, 304.
IEEE International Solid-State Circuits Conference, 1981, pp. 80-81, "Memories and Redundancy Techniques", K. Kokkonen et al.
Kobayashi Noboru
Konishi Satoshi
Gossage Glenn A.
Hecker Stuart N.
Tokyo Shibaura Denki Kabushiki Kaisha
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