Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2005-05-10
2005-05-10
Huynh, Andy (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S261000, C257S315000, C257S321000, C257S322000, C365S185010, C365S185050, C365S185270, C365S185280, C365S185330
Reexamination Certificate
active
06891220
ABSTRACT:
A memory cell has a trench formed into a surface of a semiconductor substrate, and spaced apart source and drain regions with a channel region formed therebetween. The source region is formed underneath the trench, and the channel region includes a first portion extending vertically along a sidewall of the trench and a second portion extending horizontally along the substrate surface. An electrically conductive floating gate is disposed in the trench adjacent to and insulated from the channel region first portion. An electrically conductive control gate is disposed over and insulated from the channel region second portion. A block of conductive material has at least a lower portion thereof disposed in the trench adjacent to and insulated from the floating gate, and can be electrically connected to the source region. A method of programming the cell comprises the steps of creating an inversion layer in the second portion of the channel. A stream of electrons is generated at the drain region which is adjacent to the inversion layer, and the stream of electrons is passed through the inversion layer, reaching a pinch off point. The electrons are accelerated through the depletion region by the field lines from the floating gate, with little or no scattering, causing the electrons to be accelerated through the insulator, separating the floating gate from the substrate, and injected onto the floating gate.
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Hu Yaw Wen
Kianian Sohrab
Yeh Bing
DLA Piper Rudnick Gray Cary US LLP
Huynh Andy
Silicon Storage Technology, Inc.
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