Static information storage and retrieval – Floating gate – Particular biasing
Reexamination Certificate
2011-03-22
2011-03-22
Luu, Pho M (Department: 2824)
Static information storage and retrieval
Floating gate
Particular biasing
C365S185110, C365S185170, C365S230040, C365S230090
Reexamination Certificate
active
07911847
ABSTRACT:
A method of programming data in a NAND flash memory device including at least one even bitline and at least one odd bitline, the method including programming N-bit data into first cells coupled to the at least one even bitline or the at least one odd bitline and programming M-bit data into second cells coupled to the other of the at least one even bitline and the at least one odd bitline, where N is a natural number greater than one and M is a natural number greater than N.
REFERENCES:
patent: 5966326 (1999-10-01), Park et al.
patent: 6353553 (2002-03-01), Tamada et al.
patent: 6751124 (2004-06-01), Lee
patent: 7221589 (2007-05-01), Li
patent: 7443728 (2008-10-01), Lee et al.
patent: 2001-210082 (2001-08-01), None
patent: 1999-0013057 (1999-02-01), None
patent: 10-0205240 (1999-04-01), None
Choi Dong-uk
Kang Hee-Soo
Lee Choong-ho
Lee & Morse P.C.
Luu Pho M
Samsung Electronics Co,. Ltd.
LandOfFree
Method of programming data in a NAND flash memory device and... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method of programming data in a NAND flash memory device and..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of programming data in a NAND flash memory device and... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2758094