Method of programming data in a NAND flash memory device and...

Static information storage and retrieval – Floating gate – Particular biasing

Reexamination Certificate

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C365S185110, C365S185170, C365S230040, C365S230090

Reexamination Certificate

active

07911847

ABSTRACT:
A method of programming data in a NAND flash memory device including at least one even bitline and at least one odd bitline, the method including programming N-bit data into first cells coupled to the at least one even bitline or the at least one odd bitline and programming M-bit data into second cells coupled to the other of the at least one even bitline and the at least one odd bitline, where N is a natural number greater than one and M is a natural number greater than N.

REFERENCES:
patent: 5966326 (1999-10-01), Park et al.
patent: 6353553 (2002-03-01), Tamada et al.
patent: 6751124 (2004-06-01), Lee
patent: 7221589 (2007-05-01), Li
patent: 7443728 (2008-10-01), Lee et al.
patent: 2001-210082 (2001-08-01), None
patent: 1999-0013057 (1999-02-01), None
patent: 10-0205240 (1999-04-01), None

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