Static information storage and retrieval – Floating gate – Particular biasing
Reexamination Certificate
2011-08-02
2011-08-02
Lam, David (Department: 2827)
Static information storage and retrieval
Floating gate
Particular biasing
C365S185280, C365S185270
Reexamination Certificate
active
07990769
ABSTRACT:
A first channel in the substrate underlying a trap gate is biased to cause trapping of holes or electrons in the trap gate and thereby program the memory device to a programmed state. A second channel in the substrate underlying the trap gate and transverse to the first channel is biased to sense the programmed state. For example, biasing a first channel in the substrate underlying the trap gate to cause trapping of holes or electrons in the trap gate and thereby program the memory device to a programmed state may include applying voltages to a first source/drain region and first gate on a first side of the trap gate and to a second source/drain region and a second gate on a second side of the trap gate, and biasing a second channel in the substrate underlying the trap gate and transverse to the first channel to sense the programmed state may include applying voltages to a third source/drain region on a third side of the trap gate and to a fourth source/drain region on a fourth side of the trap gate.
REFERENCES:
patent: 7075144 (2006-07-01), Kim
patent: 7447082 (2008-11-01), Wang et al.
patent: 2005-051227 (2005-02-01), None
patent: 1019990061345 (1999-07-01), None
patent: 1020070010923 (2007-01-01), None
Lam David
Myers Bigel Sibley & Sajovec P.A.
Samsung Electronics Co,. Ltd.
LandOfFree
Method of programming and sensing memory cells using... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method of programming and sensing memory cells using..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of programming and sensing memory cells using... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2780073