Method of programming and erasing an EEPROM device under an elev

Details Method of programming and erasing an EEPROM device under an elev Method of programming and erasing an EEPROM device under an elev

1998-11-24

1999-12-28

Tran, Andrew Q.

Static information storage and retrieval

Read/write circuit

Differential sensing

365211, 365 51, 36518509, 36518529, 36518533, G11C 704, G11C 1606

Patent

active

060090332

ABSTRACT:
A semiconductor device having an EEPROM array includes resistive elements capable of elevating the temperature of the EEPROM array during programming and erasing operations. The resistive elements are located in close proximity to individual EEPROM cells within an EEPROM array. By elevating the temperature of the EEPROM cell during programming and erasing operations, data errors associated with shifting threshold voltages of floating-gate devices within the EEPROM is reduced. An operating method for improving the long term reliability of an EEPROM device includes the step of providing thermal energy during programming and erasing sufficient to raise the temperature of the EEPROM device to at least about 70.degree. C.

REFERENCES:
patent: 5623594 (1997-04-01), Swamy
patent: 5875142 (1999-02-01), Chevallier
patent: 5926386 (1999-07-01), Ott et al.
patent: 5933365 (1999-08-01), Klersy et al.

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