Static information storage and retrieval – Floating gate – Particular biasing
Reexamination Certificate
2005-01-04
2005-01-04
Nguyen, Tan T. (Department: 2818)
Static information storage and retrieval
Floating gate
Particular biasing
C365S185030, C365S185180, C365S185240, C365S185300
Reexamination Certificate
active
06839284
ABSTRACT:
A method of programming and erasing a non-volatile semiconductor memory is provided. The memory device for such operation has one first conductivity substrate (10), a plurality of second conductivity deep ion wells (12), a plurality of shallow ion wells (14), a plurality of memory cell arrays disposed above the shallow ion wells (14), a plurality of bit lines (BL) connected to the shallow ion wells (14) through respective conductive plugs (18), and a plurality of shallow trench insulation (STI) layers (16) above the substrate (10). The programming of memory cells with multi-level data storage takes a threshold voltage (Vth) in the negative voltage range, whilst the erasing of memory cells takes a threshold voltage (Vth) in the positive voltage range. The erasing operation is performed in conjunction with a self-limiting means to prevent continuous ascending of the threshold voltage (Vth) as the erasing operation is in progress.
REFERENCES:
patent: 4797856 (1989-01-01), Lee et al.
patent: 5220533 (1993-06-01), Turner
patent: 5576993 (1996-11-01), Hong
patent: 6185133 (2001-02-01), Chan et al.
patent: 6233175 (2001-05-01), Wang et al.
patent: 6552387 (2003-04-01), Eitan
Chang Hsiang-Chung
Yang Ching-Sung
Dennison Schultz Dougherty & MacDonald
Nguyen Tan T.
Powerchip Semiconductor Corp.
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