Static information storage and retrieval – Read/write circuit – Including reference or bias voltage generator
Reexamination Certificate
2005-10-04
2005-10-04
Le, Vu A. (Department: 2824)
Static information storage and retrieval
Read/write circuit
Including reference or bias voltage generator
C365S225700
Reexamination Certificate
active
06952371
ABSTRACT:
A booting circuit, used during antifuse programming, that has a clamping circuit designed to prevent a programming voltage from being unnecessarily limited by other components in an integrated circuit. The booting circuit is connected between an external interface, such as a bond pad, and an internal line, and is activated when the programming voltage is being applied directly to the internal line (i.e., not through the external interface). When activated, the clamping circuit allows a suitable and sufficiently high voltage to be applied to the internal line to properly program the antifuses while also clamping the amount of voltage seen at the external interface.
REFERENCES:
patent: 5537350 (1996-07-01), Larsen et al.
patent: 5706238 (1998-01-01), Cutter et al.
patent: 5734617 (1998-03-01), Zheng
patent: 5742555 (1998-04-01), Marr et al.
patent: 5896041 (1999-04-01), Sher et al.
patent: 5898186 (1999-04-01), Farnworth et al.
patent: 5973978 (1999-10-01), Cutter et al.
patent: 6130834 (2000-10-01), Mullarkey et al.
patent: 6154412 (2000-11-01), Ishikawa et al.
patent: 6255894 (2001-07-01), Cutter et al.
patent: 6525982 (2003-02-01), Cowles
patent: 6597605 (2003-07-01), Kreifels et al.
Cowles Timothy B.
Koelling Jeffrey
Dickstein , Shapiro, Morin & Oshinsky, LLP
Le Vu A.
LandOfFree
Method of programming a programmable element in a memory device does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method of programming a programmable element in a memory device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of programming a programmable element in a memory device will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3481732