Static information storage and retrieval – Systems using particular element – Resistive
Reexamination Certificate
2011-07-12
2011-07-12
Nguyen, Tuan T (Department: 2824)
Static information storage and retrieval
Systems using particular element
Resistive
C365S163000, C365S151000, C365S157000
Reexamination Certificate
active
07978496
ABSTRACT:
A nonvolatile memory cell includes a steering element located in series with a storage element, where the storage element comprises a carbon material. A method of programming the cell includes applying a reset pulse to change a resistivity state of the carbon material from a first state to a second state which is higher than the first state, and applying a set pulse to change a resistivity state of the carbon material from the second state to a third state which is lower than the second state. A fall time of the reset pulse is shorter than a fall time of the set pulse.
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Chen Xiying
Kumar Tanmay
Nguyen Tuan T
Reidlinger R Lance
SanDisk 3D LLC
The Marbury Law Group PLLC
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