Method of programming a multi-level, electrically...

Details Method of programming a multi-level, electrically... Method of programming a multi-level, electrically...

2006-09-19

2006-09-19

Dinh, Son T. (Department: 2824)

Static information storage and retrieval

Floating gate

Particular biasing

C365S185030, C365S185190

Reexamination Certificate

active

07110300

ABSTRACT:
A method of programming a multi-level, electrically-programmable memory with memory cells electrically programmable into at least two distinct programmed states, includes: defining at least two programming sequences, each one being designed for bringing memory cells into at least one respective programmed state; receiving a pattern of data to be written into a selected group of memory cells of the memory; analyzing the pattern for determining sub-groups of memory cells, each sub-group of memory cells including the memory cells in the selected group that are to be brought into at least a respective one of the at least two programmed states; and submitting the memory cells in each sub-group to the respective programming sequence. A memory circuit and a computing system are also provided.

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