Method of programming a memory device

Details Method of programming a memory device Method of programming a memory device

2007-09-11

2007-09-11

Tran, Michael T (Department: 2827)

Static information storage and retrieval

Systems using particular element

Ferroelectric

C365S185030

Reexamination Certificate

active

11146690

ABSTRACT:
The present invention is a method of programming a memory device, wherein different levels or magnitudes of current may be applied to and imposed on the memory device so that any one of a plurality of memory states may be realized. A read step indicates the so determined state of the memory device.

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