Semiconductor device manufacturing: process – Chemical etching
Reexamination Certificate
2007-11-06
2007-11-06
Deo, Duy-Vu N. (Department: 1765)
Semiconductor device manufacturing: process
Chemical etching
C438S733000, C438S694000, C216S041000
Reexamination Certificate
active
11194489
ABSTRACT:
Spacers are formed on sidewalls of striplike parts of a pattern layer of periodic structure. The pattern layer is removed, and the spacers are covered with a further spacer layer, which is then structured to second sidewall spacers. Gaps between the spacers are filled with a complementary layer. The upper surface is planarized to a lower surface level, leaving a periodic succession of the first spacers, the second spacers and the residual parts of the complementary layer. The lateral dimensions are adapted in such a manner that a removal of one or two of the remaining layers renders a periodic pattern of smaller pitch.
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Runbin (Computer Aids for VLSI Design © 1984).
Caspary Dirk
Parascandola Stefano
Deo Duy-Vu N.
George Patricia A.
Slater & Matsil L.L.P.
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