Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2006-05-02
2006-05-02
Nhu, David (Department: 2818)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S663000, C438S662000
Reexamination Certificate
active
07037831
ABSTRACT:
A method of production of a multilayer ceramic capacitor or other multilayer ceramic electronic device with few structural defects and improved highly accelerated life, that is, a method of production of a multilayer ceramic electronic device having a firing step of firing a stack comprised of a dielectric layer paste and an internal electrode layer paste including a base metal alternately arranged in a plurality of layers, a first annealing step of annealing, at a temperature T1of 600 to 900° C., the stack after firing and a second annealing step of annealing, at a temperature T2of 900 to 1200° C. (however, excluding 900° C.), the stack after said first annealing.
REFERENCES:
patent: 5336532 (1994-08-01), Haluska et al.
patent: 6510040 (2003-01-01), Sato et al.
patent: A 08-008137 (1996-01-01), None
patent: A 2002-080279 (2002-03-01), None
Endoh Kenta
Takahara Wataru
Watanabe Yasuo
Nhu David
Oliff & Berridg,e PLC
TDK Corporation
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