Method of producing thin films of silicon

Details Method of producing thin films of silicon Method of producing thin films of silicon

1982-07-01

1984-12-25

Bernstein, Hiram H.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156614, 156DIG64, 148191, 136258, C30B 2502

Patent

active

044902085

ABSTRACT:
A method of producing thin films of silicon is characterized in that a p-type or n-type thin film of doped silicon having a dopant or impurity element is placed in a plasma atmosphere of elements selected from the group consisting of fluorine, chlorine, bromine, iodine, and hydrogen, whereby the concentration of an impurity element in the thin film is decreased adjacent to the surface of thin film and accordingly the impurity element is replaced by the plasma element adjacent to the surface of the thin film.

REFERENCES:
patent: 4365107 (1982-12-01), Yamauchi
Thin Solid Films, 80 (1981-Jun.) 169-176, Saraie et al.

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