Method of producing thin film electroluminescent structures

Details Method of producing thin film electroluminescent structures Method of producing thin film electroluminescent structures

1986-03-27

1987-06-23

Niebling, John F.

Chemistry: electrical and wave energy

Processes and products

Coating, forming or etching by sputtering

20419229, 20419215, C23C 1434

Patent

active

046750924

ABSTRACT:
Method of producing a thin film electroluminescent device by sputtering a first transparent electrode of indium tin oxide or tin oxide onto a glass substrate, sputtering a layer of insulating material, for example barium tantalate, over the transparent electrode, and then forming a phosphor layer of zinc sulfide with manganese as an activator on the layer of insulating material. To form the phosphor layer electrical energy is applied to a target containing elemental zinc in an atmosphere containing hydrogen sulfide and argon to cause sputtering therefrom. Elemental zinc reacts with the hydrogen sulfide to deposit a layer of zinc sulfide over the layer of insulating material. The manganese is cosputtered either from a separate target or from a single target incorporating both zinc and manganese.

REFERENCES:
patent: 4027192 (1977-05-01), Hanak
patent: 4279726 (1981-07-01), Baird et al.
patent: 4389295 (1983-06-01), Davey et al.
R. Tueta et al., "Fabrication . . . Applications", Met. and Protective Coat., Thin Solid Films, 80(1981) pp. 143-148.
Hanak, "Electro . . . Films", Proc. 6th Internl. Vac. Congr. 1974, Jap. J. Appl. Phys. Suppl. 2, Pt. 1,1974, pp. 809-812.
Murray et al., "Caracteristique . . . ", Thin Solid Films, 1973, 17, pp. 75-83.
Murray et al., "ZnS . . . Photocells", Electronics Letter, vol. 9, No. 21, 10/73, pp. 491-493.
Schonbrodt et al., "Preparation . . . ", Thin Solid Films, 1981, 81, pp. 45-52.

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