Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – Insulated gate formation
Patent
1994-10-14
1999-03-09
Bowers, Jr., Charles L.
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
Insulated gate formation
438666, 438669, H01L 213205
Patent
active
058800158
ABSTRACT:
A method is provided for making conductive structures whereby an insulating layer is formed over a substrate. A conductive layer is then formed over the insulating layer. A first photoresist layer is formed over the conductive layer, patterned and developed. The conductive layer is etched after which the first photoresist layer is removed. A second photoresist layer is formed over the integrated circuit, patterned and developed. The remaining regions of the conductive layer forming an interconnect or a gate are partially etched to form two-tiered stepped sidewalls.
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Bowers Jr. Charles L.
Galantha Theodore E.
Gurley Lynne A.
Hill Kenneth C.
Jorgenson Lisa K.
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