Method of producing small conductive members on a substrate

Details Method of producing small conductive members on a substrate Method of producing small conductive members on a substrate

1984-05-17

1988-07-05

Straub, Gary P.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

15662072, 15662073, 156604, 1566161, 156DIG64, 156DIG80, 156DIG73, 4271261, 437 99, 437170, 437173, 428700, 428620, 428623, C30B 1321, C30B 2102, C30B 2910

Patent

active

047552565

ABSTRACT:
Method of forming alternating narrow strips of conductive metal silicide, specifically cobalt disilicide, and silicon on a substrate as of silicon with a silicon dioxide or silicon nitride surface layer. Cobalt and silicon are deposited on the substrate in the mole ratio of the eutectic composition of cobalt disilicide and silicon. A molten zone is caused to traverse these materials which upon resolidification at the trailing edge of the molten zone segregate into the two eutectic phases forming alternating narrow strata or lamellae of cobalt disilicide and silicon.

REFERENCES:
patent: 4461070 (1984-07-01), Cline
patent: 4477324 (1984-10-01), Cline
patent: 4496634 (1985-01-01), Cline
patent: 4500609 (1985-02-01), Cline
Busch et al, Appl. Phys. Lett. 41(4), 8/82 363-364.
Albers et al, J. Crystal Growth 18(1973) pp. 147-150.
Cline, J. Appl. Physics 52 (1981) pp. 256-261.
Cline, J. Appl. Physics 53(7) pp. 4896-4902.

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