Method of producing single crystals of semiconductor material by

Details Method of producing single crystals of semiconductor material by Method of producing single crystals of semiconductor material by

1972-06-28

1976-01-27

Yudkoff, Norman

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

13DIG1, 23273SP, 219 1043, 23301SP, B01J 1710

Patent

active

039350592

ABSTRACT:
In a floating-zone melting process for producing single crystals of a semi-conductor material from a semi-conductor rod and a seed crystal, the rod is heated by high-frequency induction from an inductance coil which is spaced from a short-circuited annular conductor. The spacing between the inductance coil and the short-circuited conductor is varied during passage of the molten zone to correspond with variations in the diameter of the growing crystal.

REFERENCES:
patent: 2905798 (1959-09-01), Freutel
patent: 3030194 (1962-04-01), Emeis
patent: 3275417 (1966-09-01), Hunt
patent: 3342970 (1967-09-01), Emeis
patent: 3644097 (1972-02-01), Knudsen
patent: 3649210 (1972-03-01), Keller

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