Method of producing SIMOX wafer

Details Method of producing SIMOX wafer Method of producing SIMOX wafer

2007-03-27

2009-06-23

Ghyka, Alexander G (Department: 2812)

Semiconductor device manufacturing: process

Introduction of conductivity modifying dopant into...

Ion implantation of dopant into semiconductor region

C438S423000, C438S514000, C438S522000, C257SE21561, C257SE21563

Reexamination Certificate

active

07550371

ABSTRACT:
A SIMOX wafer is produced by implanting an oxygen ions into a surface of a Si substrate and then conducting a high-temperature annealing, in which an atmosphere in at least an end stage of the high-temperature annealing treatment is an Ar or N2atmosphere containing an oxygen of more than 3 volume % but not more than 10 volume %.

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patent: WO 01/84601 (2001-11-01), None
Holland et al., “Formation of Ultrathin, Buried Oxides in Si by O+Ion Implantation”,Applied Physics Letters, AIP, American Institute of Physics, Melville, NY, US, vol. 69, No. 5, Jul. 29, 1996, pp. 674-676, XP012017096, ISSN: 003-6951.
Ekoue, Adamah, “European Search Report”, European Patent Office, May 30, 2007, Application No. EP 07 00 6290, Berlin.

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