Method of producing SIMOX wafer

Details Method of producing SIMOX wafer Method of producing SIMOX wafer

2011-03-22

2011-03-22

Pham, Thanh V (Department: 2894)

Semiconductor device manufacturing: process

Formation of semiconductive active region on any substrate

On insulating substrate or layer

C438S149000, C438S478000, C438S479000

Reexamination Certificate

active

07910463

ABSTRACT:
A SIMOX wafer is produced by implanting an oxygen ion, in which a hydrogen ion is implanted at a dose of 1015-1017/cm2before or after the step of the oxygen ion implantation.

REFERENCES:
patent: 6083324 (2000-07-01), Henley et al.
patent: 2002/0173123 (2002-11-01), Fogel et al.
patent: 2004/0166612 (2004-08-01), Maydan et al.

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