Method of producing Si-Ge base heterojunction bipolar device

Details Method of producing Si-Ge base heterojunction bipolar device Method of producing Si-Ge base heterojunction bipolar device

1996-12-17

1998-12-08

Niebling, John

Semiconductor device manufacturing: process

Forming bipolar transistor by formation or alteration of...

Having heterojunction

438312, 438513, 438514, 438563, 438564, 148DIG10, 148DIG58, 148DIG59, 148DIG72, 257198, 257592, 257593, H01L 21331

Patent

active

058468676

ABSTRACT:
A method of producing a bipolar transistor includes the step of forming an emitter contact layer containing a high concentration of impurity by means of plasma doping or solid-state diffusion without causing diffusion of impurity in a base layer. This makes it possible to realize a thin base layer having a high impurity concentration.
The invention also provides a method of producing a semiconductor device including a bipolar transistor and another device element such as a resistor element including a polysilicon layer containing an activated impurity in such a manner that both the bipolar transistor and the device element are disposed on the same single substrate, the method including the steps of: forming a polysilicon layer containing an activated impurity on the surface of a substrate; and then forming a base layer of the bipolar transistor. This method prevents the base layer from being affected by heat treatment on the polysilicon layer.

REFERENCES:
patent: 4912065 (1990-03-01), Mizuno et al.
patent: 5296391 (1994-03-01), Sato et al.
patent: 5323032 (1994-06-01), Sato et al.
patent: 5424228 (1995-06-01), Imai
patent: 5494836 (1996-02-01), Imai
patent: 5504018 (1996-04-01), Sato
patent: 5663097 (1997-09-01), Sakamoto et al.

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