Method of producing semiconductor device using reactive ion etch

Details Method of producing semiconductor device using reactive ion etch Method of producing semiconductor device using reactive ion etch

1986-10-30

1988-05-17

Powell, William A.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156644, 156646, 156653, 156656, 156657, 1566591, 156662, 20419237, 252 791, 357 67, 357 71, 437192, 437193, 437194, 437200, 437228, 437238, 437245, H01L 21306, B44C 122, C03C 1500, C23F 102

Patent

active

047448610

ABSTRACT:
A method of producing a semiconductor device comprises the steps of forming on a substrate a layer of a material selected from a group consisting of aluminum, aluminum alloy, titanium, polysilicon and a metal silicide, and carrying out a dry etching of the layer in a reactive gas consisting essentially of bromine gas.

REFERENCES:
patent: 4211601 (1980-07-01), Mogab
patent: 4444617 (1984-04-01), Whitcomb
patent: 4450042 (1984-05-01), Purdes
patent: 4528066 (1985-07-01), Merkling et al.

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