Method of producing semiconductor device using an adsorption lay

Details Method of producing semiconductor device using an adsorption lay Method of producing semiconductor device using an adsorption lay

1993-01-19

1998-12-22

Chaudhari, Chandra

Semiconductor device manufacturing: process

Introduction of conductivity modifying dopant into...

Diffusing a dopant

438307, 438974, H01L 21225

Patent

active

058519092

ABSTRACT:
An impurity adsorption layer is formed on a substrate surface and solid-phase thermal diffusion is carried out to form source and drain regions for a metal-insulator-semiconductor field-effect-transistor having lightly doped drain structure or double doped drain structure. The thus formed impurity-doped region is ultrashallow, thereby producing high speed semiconductor devices of small dimensions.

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