Method of producing semiconductor device involving the use of si

Details Method of producing semiconductor device involving the use of si Method of producing semiconductor device involving the use of si

1976-12-02

1979-05-22

Pitlick, Harris A.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

148175, 156657, 427 85, 427 94, 427399, H01L 21318, H01L 21308, H01L 2132

Patent

active

041558022

ABSTRACT:
A method of producing a semiconductor device comprises removing all of the masking films used for forming desired semiconductor regions in the substrate, newly forming an insulation film and selectively forming a second insulation film at predetermined portions by the use of a silicon nitride film as the mask.

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patent: 3648125 (1972-03-01), Peltzer
patent: 3649886 (1972-03-01), Kooi
patent: 3652324 (1972-03-01), Chu et al.
patent: 3759761 (1973-09-01), Mori et al.
patent: 3764423 (1973-10-01), Hauser et al.
patent: 3798062 (1974-03-01), Mroczeck et al.
patent: 3874919 (1975-04-01), Lehman
patent: 3900350 (1975-08-01), Appels et al.
patent: 3917495 (1975-11-01), Horn
patent: 3925120 (1975-12-01), Saida et al.
patent: 3958040 (1976-05-01), Webb
patent: 4091169 (1978-05-01), Bohg et al.
Shasteen "Recessed Oxide Isolation Technique" IBM Tech. Disc. Bul. vol. 19, No. 10 3/77 p. 3672.
Appels et al. "Local Oxidation of Silicon and its Application in Semiconductor Device Technology" Phillips Res. Rep., vol. 25, No. 2, Apr. 1970 pp. 118-132.

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