Method of producing semiconductor device by dicing

Details Method of producing semiconductor device by dicing Method of producing semiconductor device by dicing

1997-03-28

1999-12-07

Dutton, Brian

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

Physical stress responsive

438 68, 438113, 438464, H01L 2100, H01L 2144, H01L 2148, H01L 2150

Patent

active

059982349

ABSTRACT:
On a back face of a silicon wafer before dicing, tapered grooves having sloped side walls are formed by anisotropic etching along with thin portions. Strain gauges are formed on each thin portion, thereby forming a sensor chip on the silicon wafer. The back face of the silicon wafer is attached to a self-adhesive seat. Thereafter, the silicon wafer is cut along the grooves by a dicing blade to divide it into each sensor chip. In dicing, the side faces of the dicing blade cut the sloped side walls of the tapered grooves. As a result, the silicon wafer is diced into individual sensor chip having no cracks and chippings.

REFERENCES:
patent: 4080245 (1978-03-01), Yamanaka et al.
patent: 5000811 (1991-03-01), Campanelli
patent: 5196378 (1993-03-01), Bean et al.
patent: 5219796 (1993-06-01), Quinn et al.
patent: 5421956 (1995-06-01), Koga
patent: 5531002 (1996-07-01), Okada
Journal of Nippondenso Technical Disclosure No. 104-021, Published on Sep. 15, 1995 (w/ abstract).

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