Semiconductor device manufacturing: process – Packaging or treatment of packaged semiconductor – Insulative housing or support
Patent
1996-11-07
1999-11-02
Chaudhuri, Olik
Semiconductor device manufacturing: process
Packaging or treatment of packaged semiconductor
Insulative housing or support
438124, 438126, 438127, H01L 2156
Patent
active
059769165
DESCRIPTION:
BRIEF SUMMARY
FIELD OF THE INVENTION
The present invention relates to a method of producing semiconductor devices such as a plastic pin grid array (PPGA) and a plastic ball grid array (PBGA) having a high performance in cavity-fill form as a multi-in/out electrode (Multi I/O) and an encapsulating pellet employed therein.
BACKGROUND OF THE INVENTION
As a challenge required in line with the recent improvement in performance of semiconductor devices, how to package a high wattage multi-in/out device and also how to shorten a wire length between the device and a mother board have come to a technical aim. Besides, it is another theme how to achieve the above aim at a low cost, including process cost, with high reliability. As countermeasures to these problems, a cavity-fill formed PPGA or PBGA having a structure shown in FIG. 5 is proposed. Namely, a substrate 2 comprising a multi-layer circuit with a center hole is put on a metallic heat sink 1. Then, a semiconductor element 3 is incorporated within a cavity formed with the metallic heat sink 1 and the substrate 2, which is encapsulated with a resin layer 4. In FIG. 5, 9 are conductive globular bumps. As a method of encapsulating a semiconductor element, a method of encapsulating by covering a cavity with a ceramic board may be listed in addition to the above encapsulating method using the resin layer.
The sealing method using a ceramic board has some problems. The problems are; high cost of ceramic and incomplete sealing caused in bonding a ceramic board on a substrate to seal a cavity, because the bonding ability between organic materials, for example, a substrate or a bonding agent, and an inorganic material, for example, a ceramic board is inferior, resulting in a decrease in this sealing method one time. Meanwhile, in the encapsulating method by forming the encapsulating resin layer 4 to encapsulate the semiconductor element 3 (FIG. 5), a liquid resin composition is usually employed as a material for forming the encapsulating resin layer 4, which is formed by injecting the liquid resin composition into the cavity. However, when the liquid resin composition is employed, it should be stored at an extremely low temperature (about -40.degree. C. ). Also, since the liquid resin composition must be injected into a suitable position with a suitable amount by using an injector, special apparatus are required to control these conditions. Further, to obtain high fluidity, a liquid material with low moisture-proof reliability or a material containing solvent, which requires low-temperature preheating in curing, is employed, causing a lot of problems in relation to process reliability. Besides, in order to improve fluidity, a material with low content of a filler is employed, wherein a linear expansion coefficient becomes higher and greatly different from that of a semiconductor element, a substrate, a heat sink or the like, resulting in a problem that stress is applied when using.
OBJECT OF THE INVENTION
It is an object of the present invention to provide a method of easily producing a semiconductor device wherein low stress performance and superior moisture-proof reliability can be realized, and an encapsulating pellet employed therein.
DISCLOSURE OF THE INVENTION
In order to achieve the object mentioned above, the first gist of the present invention is a method of producing a semiconductor device comprising; incorporating a semiconductor element into a cavity formed within a substrate, placing a pellet (B) made of the following encapsulating resin composition (A) on the incorporated semiconductor element and heating and melting thereof, and charging the melted encapsulating resin composition into the cavity and curing thereof so as to encapsulate the semiconductor element: normal temperature, containing the following (a) to (c), wherein (c) is set up within the range of not less than 74 weight % and below 90 weight % based on the whole resin composition; and heated to be melted at 150.degree. C. for 10 minutes, a flow area is not less than 500 mm.sup.2.
Further, the s
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Akizuki Shinya
Fukushima Takashi
Ikemura Kazuhiro
Ito Satoshi
Kuwamura Makoto
Chambliss Alonzo
Chaudhuri Olik
Nitto Denko Corporation
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