Method of producing semiconductor device

Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of... – Insulative material deposited upon semiconductive substrate

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438770, 438778, 438781, 438787, H01L 2131

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active

058830138

ABSTRACT:
A method of forming a silicone resin film for protecting a semiconductor substrate on the substrate for a certain period of time and then removing the film from the substrate including the steps of: (a) forming the silicone resin film, on at least one portion of the substrate; (b) treating the film with an organic solvent, so that a majority of the film is dissolved in the organic solvent and thereby removed from the substrate and that a residue remains on the substrate; (c) oxidizing the residue to silicon oxide; and (d) treating the silicon oxide with an aqueous solution containing at least one of hydrogen fluoride and ammonium fluoride, so as to dissolve the silicon oxide in the solution and to thereby remove the silicon oxide from the substrate is described. The silicone resin film formed on the substrate can be easily completely removed, without damaging the electrical characteristics of the semiconductor.

REFERENCES:
patent: 4118595 (1978-10-01), Pfahnl et al.
patent: 4944893 (1990-07-01), Tanaka et al .
patent: 5208066 (1993-05-01), Fujisaki et al.
patent: 5244820 (1993-09-01), Kamata et al.
patent: 5270259 (1993-12-01), Ito et al.
Ayahito Horinouchi et al, Sweep Rate Dependence of I-V Characteristics in Electrochemical Silicon Etch-Stop, Technical Digest of 9th Sensor Symposium, 1990, pp. 19-22.
Product specification of KRS-1 and KRS-2 of Kanto Chemical Co. is cited on p. 6 of the specification.
Product specification of Silicone Dissolving Agent SSI-3 of Mitsu Kagaku Co.
Product specification of KRS-1 and KRS-2 of Kanto Chemical Co. is cited on p. 6 of the specification, published Nov., 1992.
Product specification of Silicone Dissolving Agent SSI-3 of Mitsu Kagaku Co, published on Apr. 1, 1991.

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