Method of producing semiconductor device

Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material

Reexamination Certificate

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Details

C438S678000, C257SE29143

Reexamination Certificate

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11136494

ABSTRACT:
A method of producing a semiconductor device according to an aspect of the present invention comprises forming a seed film of Cu on a substrate; polycrystallizing the seed film formed on the substrate; and forming a plated film of Cu on the polycrystallized seed film by electrolytic plating.

REFERENCES:
patent: 6103624 (2000-08-01), Nogami et al.
patent: 6143650 (2000-11-01), Pramanick et al.
patent: 6242349 (2001-06-01), Nogami et al.
patent: 6535535 (2003-03-01), Yamazaki et al.
patent: 06-291191 (1994-10-01), None
patent: 2001-015923 (2001-01-01), None
patent: 2003-045878 (2003-02-01), None

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