Method of producing semiconductor device

Details Method of producing semiconductor device Method of producing semiconductor device

2005-08-09

2005-08-09

Le, Dung A. (Department: 2818)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

C438S166000, C257S066000

Reexamination Certificate

active

06927107

ABSTRACT:
In a production method of a semiconductor device, a catalyst element, e.g. Ni, is added to an amorphous silicon film, formed on a substrate with an insulating surface, for promoting crystallization of the amorphous silicon film. Thereafter, the amorphous silicon film is subjected to heat treatment to cause crystal growth therein. Next, the crystal growth is stopped in a state where minute amorphous regions (uncrystallized regions) remain in the film. Next, the silicon film is irradiated with strong light (laser light) so as to be further crystallized. As a result, a crystalline silicon film that has high quality and is excellent in uniformity is obtained.

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