Method of producing semiconductor device

Details Method of producing semiconductor device Method of producing semiconductor device

1997-09-12

2000-06-20

Bowers, Charles

Semiconductor device manufacturing: process

Formation of semiconductive active region on any substrate

Amorphous semiconductor

438485, 117103, C23C 1600

Patent

active

060777591

ABSTRACT:
A silicon oxide film is formed as an under film on a glass substrate and then an amorphous silicon film is formed thereon. Using hydrogen plasma produced by a frequency of 50 to 100 MHz, the amorphous silicon film formed on the glass substrate is processed. In this plasma processing, hydrogen atoms in the amorphous silicon film is combined with hydrogen atoms in the plasma with a high energy state, so that a gas is generated and the dehydrogenation from the amorphous silicon film progresses. After the dehydrogenation is completed, the heating treatment is performed to crystallize the amorphous silicon film and to transform the amorphous silicon film into a crystalline silicon film.

REFERENCES:
patent: 4331486 (1982-05-01), Chenevas-Paule et al.
patent: 4690830 (1987-09-01), Dickson et al.
patent: 5210050 (1993-05-01), Ishihara
patent: 5288658 (1994-02-01), Yamazaki et al.
patent: 5290712 (1994-03-01), Sato et al.
patent: 5306651 (1994-04-01), Masumo
patent: 5352291 (1994-10-01), Zhang
patent: 5366926 (1994-11-01), Mei et al.
patent: 5424230 (1995-06-01), Wakai
patent: 5505794 (1996-04-01), Nakayama et al.
patent: 5529937 (1996-06-01), Zhang et al.
patent: 5534070 (1996-07-01), Okamura et al.
patent: 5540781 (1996-07-01), Yamagami et al.
patent: 5637515 (1997-06-01), Takemura
patent: 5766344 (1992-09-01), Zhang et al.
patent: 5808321 (1994-06-01), Mitanaga et al.
J. I. Pankove, M. A. Lampert and M. L. Tarng, "Hydrogenation and Dehydrogenation of Amorphous and Crystalline Silicon," Appl. Phys. Lett., 32 (7), p. 439, Apr. 1, 1978.
S. Takenaka et al., High Mobility Poly-Si Film Transistors Using Solid Phase Crystallized a-Si Films Deposited by Plasma-Enhanced, Japanese Journal of Applied Physics,vol. 29, No. 12 (Dec. 1990) pp. 2380-2383.

Affiliated with

Also associated with

Rating

Method of producing semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of producing semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of producing semiconductor device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1851617