Method of producing self-supporting thin film of silicon single

Details Method of producing self-supporting thin film of silicon single Method of producing self-supporting thin film of silicon single

1995-03-14

1997-04-08

Garrett, Felisa C.

Etching a substrate: processes

Etching of semiconductor material to produce an article...

117 2, 438977, 438705, 438702, C30B 3306

Patent

active

056183453

ABSTRACT:
A self-supporting thin film of silicon single crystal is produced essentially by the steps of implanting boron ions in a silicon single crystal substrate from one major surface thereof to form a high impurity concentration layer having a high boron concentration in the substrate; heating the silicon single crystal substrate formed with the high impurity concentration layer in an atmosphere containing oxygen to form an oxide film on the surface of the single crystal substrate and make the high impurity concentration layer resistant to etching; masking all of the oxide film surface other than that at the center region on the surface opposite from that implanted with boron ions and then exposing the high impurity concentration layer by high-speed mask etching followed by selective etching; and removing the oxide film.

REFERENCES:
Journal of Applied Physics, vol. 72, No. 1, Jul. 1992, Stefan Joksch, et al., "Characterization of Thin, Doped Silicon Single Crystals by X-Ray Diffraction", pp. 54-60.
Physical Review B, vol. 19, No. 1, Jan. 1, 1979, Isamu Nashiyama, "Damage Distributions in Hydrogen-Bombarded Silicon", pp. 101-108.
Review of Scientific Instruments, vol. 51, No. 9, Sep. 1980, N.W. Cheung, "Preparation of Large-Area Monocrystalline Silicon Thin Windows", pp. 1212-1216.
Announcement of Virginia Semiconductor Inc., May 22, 1990, "2-4 Micron Thin Silicon Membranes", 1 page.

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