Method of producing polycrystalline silicon ribbon

Details Method of producing polycrystalline silicon ribbon Method of producing polycrystalline silicon ribbon

1975-12-19

1977-05-31

Esposito, Michael F.

Coating processes

Electrical product produced

Welding electrode

427 55, 427 82, 427 86, 427215, 427255, 427314, 423348, 423349, 423350, B05D 512, C01B 3302

Patent

active

040270530

ABSTRACT:
A method of producing a ribbon of polycrystalline silicon, which includes contacting a moving surface carrying a layer of particulate semiconductor silicon, with a gaseous silicon source, is disclosed. The gaseous silicon source permeates the layer of particulate silicon and, with heat applied, deposits silicon that knits the silicon particles together to a continuous, coherent polycrystalline ribbon. The ribbon is then separated from the moving surface for further processing, for example, conversion to monocrystalline silicon.

REFERENCES:
patent: 2840489 (1958-06-01), Kempter
patent: 2989376 (1961-06-01), Schaefer
patent: 2999735 (1961-09-01), Reuschel
patent: 3012861 (1961-12-01), Ling
patent: 3012862 (1961-12-01), Bertrand
patent: 3021198 (1962-02-01), Rummel
patent: 3042494 (1962-07-01), Gutsche
patent: 3900597 (1975-08-01), Chruma

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