Semiconductor device manufacturing: process – Chemical etching – Vapor phase etching
Reexamination Certificate
2011-05-17
2011-05-17
Dickey, Thomas L (Department: 2893)
Semiconductor device manufacturing: process
Chemical etching
Vapor phase etching
C258S005000
Reexamination Certificate
active
07943525
ABSTRACT:
A microelectromechanical systems (MEMS) device (20) includes a polysilicon structural layer (46) having movable microstructures (28) formed therein and suspended above a substrate (22). Isolation trenches (56) extend through the layer (46) such that the microstructures (28) are laterally anchored to the isolation trenches (56). A sacrificial layer (22) is formed overlying the substrate (22), and the structural layer (46) is formed overlying the sacrificial layer (22). The isolation trenches (56) are formed by etching through the polysilicon structural layer (46) and depositing a nitride (72), such as silicon-rich nitride, in the trenches (56). The microstructures (28) are then formed in the structural layer (46), and electrical connections (30) are formed over the isolation trenches (56). The sacrificial layer (22) is subsequently removed to form the MEMS device (20) having the isolated microstructures (28) spaced apart from the substrate (22).
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Karlin Lisa H.
Montez Ruben B.
Park Woo Tae
Zhang Lisa Z.
Dickey Thomas L
Freescale Semiconductor Inc.
Meschkow & Gresham P.L.C.
Yushin Nikolay
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