Semiconductor device manufacturing: process – Making device or circuit responsive to nonelectrical signal – Physical stress responsive
Reexamination Certificate
2011-04-26
2011-04-26
Chaudhari, Chandra (Department: 2891)
Semiconductor device manufacturing: process
Making device or circuit responsive to nonelectrical signal
Physical stress responsive
C257SE21219
Reexamination Certificate
active
07932118
ABSTRACT:
A mechanical component production method of a MEMS/NEMS structure from a monocrystalline silicon substrate includes forming anchoring zones in one face of the substrate. A lower protective layer, non-silicon, obtained by epitaxy from the face of the substrate is formed on the face. A silicon layer obtained by epitaxy from the lower protective layer is formed on the lower protective layer. An upper protective layer is formed on the silicon layer. The upper protective, silicon and lower protective layers are etched according to a pattern defining the component, until the substrate is reached, providing access routes to the substrate. A protective layer is formed on the walls formed by the etching in the epitaxied silicon layer. The component is released by isotropic etching of the substrate from the access routes, wherein the isotropic etching does not attack the lower and upper protective layers and the protective layer of the walls.
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French Search Report, (Oct. 2008).
Nguyen Valérie
Robert Philippe
Chaudhari Chandra
Commissariat a l''Energie Atomique
Pearne & Gordon LLP
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