Method of producing mask

Details Method of producing mask Method of producing mask

2010-09-01

2011-12-20

Le, Thao P. (Department: 2818)

Semiconductor device manufacturing: process

Chemical etching

Combined with coating step

C438S733000

Reexamination Certificate

active

08080478

ABSTRACT:
According to one embodiment, a method of producing a mask includes: a step of forming a pattern on a substrate; a step of forming a first film that covers the top surface and side surface of the pattern and contains a first material; a step of forming a second film containing a second material on the first film; a step of performing anisotropic etching of the first and second films in a way that forms a sidewall layer including the first and second films on the side surface of the pattern and removes the first and second films on any location other than the sidewall layer; a step of performing isotropic etching of the first film of the sidewall layer; and a step of removing the pattern.

REFERENCES:
patent: 4083098 (1978-04-01), Nicholas
patent: 2009/0152645 (2009-06-01), Tran
patent: 2010/0048024 (2010-02-01), Sugimura
patent: 2010/0112798 (2010-05-01), Lai et al.
patent: 2010/0151613 (2010-06-01), Mabuchi
patent: 2010/0151669 (2010-06-01), Lindert et al.
patent: 2010/0248483 (2010-09-01), Orita
patent: 2009-130035 (2009-06-01), None

Affiliated with

Also associated with

Rating

Method of producing mask does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of producing mask, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of producing mask will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4272582