Chemistry: electrical and wave energy – Processes and products – Coating – forming or etching by sputtering
Patent
1987-11-05
1989-07-11
Nguyen, Nam X.
Chemistry: electrical and wave energy
Processes and products
Coating, forming or etching by sputtering
20419215, C23C 1434
Patent
active
048469483
ABSTRACT:
A method of producing a magnetic film of Fe-Si-Al alloy in which argon is entrapped, by using a DC magnetron sputtering apparatus to apply RF bias to a substrate thereby depositing a Fe-Si-Al alloy film on the substrate. The alloy film produced has a thermal expansion coefficient of 110.times.10.sup.-7 to 170.times.10.sup.-7 .degree. C..sup.-1 and the substrate has a thermal expansion coefficient of 100.times.10.sup.-7 to 135.times.10.sup.-7 .degree. C..sup.-1. The amount of argon entrapped in the alloy film is controlled within the range of 0.01 o 0.3 weight percent so as to substantially zero the internal stresses in the alloy film.
REFERENCES:
patent: 4324631 (1982-04-01), Meckel et al.
patent: 4525262 (1985-06-01), Class et al.
patent: 4559572 (1985-12-01), Kumasaka et al.
patent: 4631613 (1986-12-01), French
patent: 4670972 (1987-06-01), Sahakima
patent: 4705613 (1987-11-01), French
Homma et al., "Planar Dep. . . . R. F. Bias", J. Electrochem. Soc., Jun. 1985, pp. 1466-1472.
Mori Taiichi
Saito Kazuhiro
Nguyen Nam X.
Nippon Mining Company Limited
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