Metal working – Barrier layer or semiconductor device making – Barrier layer device making
Patent
1979-06-14
1981-03-03
Lazarus, Richard B.
Metal working
Barrier layer or semiconductor device making
Barrier layer device making
313309, H01J 902, H01J 912
Patent
active
042532213
ABSTRACT:
A method of making a low voltage field device utilizing a preferentially etched unidirectionally solidified composite as the substrate. In the process, the composite is etched so that the electrically conducting rod-like or fiber phase protrudes above the matrix phase. The tip of the exposed fiber phase may be processed further to provide a rounded or needle-like geometry. Next, a layer of insulating material is deposited in a direction approximately parallel to the axes of the fibers to cause the formation of cone-like deposits of insulating material on the fiber tips which shadow the deposit on the matrix around the fibers and produce conical holes in the layer of insulating material about the fibers. Then, an electrically conductive film is deposited in approximately the same direction to produce on the insulating layer a cellular grid having openings corresponding in number and distribution to the fiber sites. Lastly, the cones of insulating material are removed from the fibers.
REFERENCES:
patent: 3789471 (1974-02-01), Spindt et al.
patent: 3812559 (1974-05-01), Spindt et al.
patent: 3840955 (1974-10-01), Hagood et al.
patent: 4163949 (1979-08-01), Shelton
Chapman Alan T.
Cochran, Jr. Joe K.
Lee Jae-Do
Georgia Tech Research Institute
Lazarus Richard B.
LandOfFree
Method of producing low voltage field emission cathode structure does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method of producing low voltage field emission cathode structure, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of producing low voltage field emission cathode structure will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-73238