Method of producing integrated silicon structures on isolated is

Details Method of producing integrated silicon structures on isolated is Method of producing integrated silicon structures on isolated is

1984-11-02

1985-12-31

Powell, William A.

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

29576W, 29580, 156646, 156648, 156649, 156651, 156653, 156657, 156662, 357 49, 427 93, H01L 21306, B44C 122, C03C 2506, C03C 1500

Patent

active

045619328

ABSTRACT:
A method for manufacturing integrated circuits is provided in which monocrystalline silicon islets are formed completely isolated from the substrate itself made from monocrystalline silicon, by a thick oxide layer.
This thick oxide layer is formed in the following way: silicon islets are formed whose top and sides are protected with silicon nitride. Then the silicon is etched isotropically, which hollows out deeply under the islets. Thick oxidization then makes up the whole of the silicon under the islets.
Thus isolated silicon islets are obtained of the same crystalline quality as the substrate.

REFERENCES:
patent: 4264382 (1981-04-01), Anantha et al.
patent: 4502913 (1985-03-01), Lechaton et al.

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