Semiconductor device manufacturing: process – Formation of semiconductive active region on any substrate
Reexamination Certificate
2007-06-05
2007-06-05
Chaudhari, Chandra (Department: 2891)
Semiconductor device manufacturing: process
Formation of semiconductive active region on any substrate
C119S081000, C257SE21108
Reexamination Certificate
active
10497203
ABSTRACT:
There is provided a method of producing multiple semiconductor components on a substrate, said method comprising the steps of: forming a predetermined relief pattern on a surface of said substrate; and epitaxially depositing a layer formed of a mixture of two or more Group III elements and two or more Group V elements on said surface; wherein said relief pattern results in said layer deposited in a single step forming with a different ratio between said Group V elements within areas having different relief pattern characteristics so as to provide different band gaps within said different areas.
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Jones Timothy Simon
Parry Gareth
Stavrinou Paul Nicholas
Chaudhari Chandra
EPIIC Limited
Nixon & Vanderhye P.C.
Such Matthew W.
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