Method of producing hetero structure

Details Method of producing hetero structure Method of producing hetero structure

1989-11-16

1991-11-19

Kunemund, Robert

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156610, 156611, 156DIG103, 437 11, 437 12, 437126, C30B 2302, C30B 2514

Patent

active

050663550

ABSTRACT:
A method of producing a hetero structure, including the steps of depositing hydrogen atoms or halogen atoms onto a surface of a first single crystal layer formed of semiconductor or metal silicide, and forming a second single crystal layer on the first single crystal layer by hetero epitaxial growth, the second single crystal layer being formed of semiconductor or metal silicide different from the material of the first single crystal layer, wherein both of the steps are continuously conducted without taking the hetero structure out of a producing device. Further, the number of the hydrogen atoms or the halogen atoms to be deposited is equal to or in the range of .+-.50% with reference to the number of dangling bonds existing in a hetero interface between the first single crystal layer and the second single crystal layer, so that the lattice defects in the hetero interface can be reduced.

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