Method of producing gallium nitride semiconductor light emitting

Details Method of producing gallium nitride semiconductor light emitting Method of producing gallium nitride semiconductor light emitting

1998-07-14

1999-10-05

King, Roy V.

Semiconductor device manufacturing: process

Making device or circuit emissive of nonelectrical signal

Compound semiconductor

438 38, 438 45, 4272557, H01L 21203

Patent

active

059637870

ABSTRACT:
A magnesium-doped semiconductor layer expressed by general formula Al.sub.x Ga.sub.1-x N (where 0.ltoreq.x.ltoreq.1) is formed on a substrate. Thereafter, on the semiconductor layer, a plurality of semiconductor layers (including an activation layer) expressed by general formula In.sub.x Al.sub.y Ga.sub.1-x-y N (where 0.ltoreq.x.ltoreq.1, 0.ltoreq.y.ltoreq.1, 0.ltoreq.x+y.ltoreq.1) are formed. The crystalline characteristics of semiconductor layers including a light emitting layer of a gallium nitride semiconductor light emitting device having a magnesium-doped gallium nitride semiconductor layer are good. Thus, in the case that the light emitting device is a laser device, it can be expected that the oscillating threshold value of the laser device becomes low. In the case that the light emitting device is a light emitting diode, it can be expected that the light emitting efficiency of the light emitting diode becomes high.

REFERENCES:
patent: 5739554 (1998-04-01), Edmond et al.
patent: 5751752 (1998-05-01), Shakouda
patent: 5767581 (1998-06-01), Nakamura et al.
patent: 5793054 (1998-08-01), Nido
patent: 5814533 (1998-09-01), Shakuda

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