Method of producing field effect transistor

Details Method of producing field effect transistor Method of producing field effect transistor

1990-08-13

1992-06-23

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 44, 437 45, 437192, 437946, H01L 21265

Patent

active

051242729

ABSTRACT:
An impurity adsorption layer is selectively formed from a gas containing an impurity on a semiconductor surface. Solid-phase diffusion of the impurity is effected from the impurity adsorption layer into the semiconductor surface to form a source region and a drain region having a sufficiently small resistivity and an ultrashallow PN junction depth, thereby producing a metal-insulator semiconductor field-effect-transistor featuring fast operating speed and reduced dimensions.

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